Thursday, May 19, 2011

ESDAXLC4-1BF3 Single line extra low capacitance TVS

Description
The ESDAXLC4-1BF3 is a single line Transil™ diode designed specifically for the protection of integrated circuits into portable equipment and miniaturized electronics devices subject to ESD and EOS transient over voltages.

Packaged in WLCSP, it minimizes PCB consumption.

STA350BW Sound Terminal 2.1-channel high-efficiency digital audio system

Description
The STA350BW is an integrated solution of digital audio processing, digital amplifier control, and FFX-power output stage, thereby creating a high-power single-chip FFX®solution comprising high-quality, high-efficiency, and all-digital amplification.

The STA350BW is based on an FFX (fully flexible amplification) processor, a proprietary technology from STMicroelectronics. FFX is the evolution and the enlargement of ST’s ternary technology: the new processor can be configured to work in ternary, binary, binary differential and phase-shift PWM modulation schemes.

The STA350BW contains the ternary, binary and binary differential implementations, a subset of the full capability of the FFX processor.

The STA350BW is part of the Sound Terminal® family that provides full digital audio streaming to the speaker, offering cost effectiveness, low power dissipation and sound enrichment.

STM32L-DISCOVERY Discovery kit for the STM32L EnergyLite 32-bit MCUs

Description
The STM32L-DISCOVERY helps you to discover the STM32L ultralow power features and to develop and share your applications.

It is based on an STM32L152RBT6 and includes an ST-Link/V2 embedded debugging tool interface, an LCD (24 segments, 4 commons), LEDs, pushbuttons, a linear touch sensor or touchkeys.

Key Features
-  STM32L152RBT6 microcontroller featuring 128 KB Flash, 16 KB RAM, 4 KB EEPROM, in an LQFP64 package
-  On-board ST-Link/V2 with selection mode switch to use the kit as a standalone ST-Link/V2 (with SWD connector for programming and debugging)
-  Board power supply: through USB bus or from an external 3.3 or 5 V supply voltage
-  External application power supply: 3 V and 5 V
-  IDD current measurement
-  LCD
   -  DIP28 package
   -  24 segments, 4 commons
-  Four LEDs:
   -  LD1 (red/green) for USB communication
   -  LD2 (red) for 3.3 V power on
-  Two user LEDs, LD3 (green) and LD4 (blue)
-  Two pushbuttons (user and reset)
-  One linear touch sensor or four touchkeys
-  Extension header for LQFP64 I/Os for quick connection to prototyping board and easy probing


Datasheet

STM1831 Voltage detector with sense input and external delay capacitor

Description
The STM1831 is a voltage detector with very low current consumption. It monitors a voltage on a separate input pin (VSEN), which is fully functional even if the monitored voltage goes down to 0 V. In addition, the delay of the output can be adjusted by an external capacitor.

Key Features
-  Voltage monitored on separate sense input VSEN
-  Factory-trimmed voltage thresholds in 100 mV increments from 1.6 V to 5.7 V
-  ±2% voltage threshold accuracy
-  Operating voltage 1.6 V to 6.0 V
-  Open drain output
-  Low supply current of 0.8 μA (typ.)
-  Time delay programmable by external capacitor
-  Power supply transient immunity
-  Available in SOT23-5 package
-  Operating temperature –40 to 85 °C

 Datasheet

STEVAL-ILL030V1 LED lighting control using DMX512 control based on STM32F102C6T6 and STCS1APHR

Description
The purpose of the STEVAL-ILL030V1 demonstration board is to demonstrate the performance of ST devices in an LED lighting control application, using the DMX512 communication protocol demonstration firmware in transmitter, receiver and standalone modes.

The USART (universal synchronous asynchronous receiver transmitter) module of the STM32F103C6 ARM 32-bit Cortex™-M3 microcontroller is used to transmit/receive data via an RS-485 transceiver. The transmitter sends DMX512 packets with a NULL START code, according to the DMX512 2008 standard.

Tuesday, May 17, 2011

STMicroelectronics Reveals Breakthrough Solution for Energy-Saving Fluorescent Lighting

Highly featured ballast controller is first to support choice of standard or low-cost power circuitry to boost adoption of high-efficiency electronic ballast in cost-sensitive markets

Geneva, May 17, 2011 - With today’s worldwide energy-saving regulations demanding the more efficient use of available energy, STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has unveiled a new ballast controller capable of reducing design time and costs. The new IC will fulfill the requirements of energy-saving regulations such as ENERGY STAR and will significantly contribute to optimization usage of available energy, dramatically reducing the CO2 emission.

Lighting accounts for up to 19% of the overall electricity consumption in the world, according to figures from Energy Information Administration - EIA - Official Energy Statistics from the U.S. Government. Private and public organizations are looking towards incentives, standards and regulations for improved energy efficiency. In this scenario, high-frequency electronic ballasts are rapidly replacing electromagnetic ballasts due to higher efficiency, no visible flickering, and low weight due to the use of electronic components.


Monday, May 16, 2011

STMicroelectronics Reveals Best-In-Class Technology Enabling Longer-Lasting Broadcast and Medical-Imaging Equipment

New RF power-MOSFET family combines industry’s most rugged silicon and thermally efficient packaging for extra reliability and performance advantages

Geneva, May 16, 2011 - High-power radio-frequency devices such as medical scanners and plasma generators will offer improved uptime for owners, as well as increased performance and lower costs, by using the latest generation of high-frequency power transistors introduced today by STMicroelectronics (NYSE: STM), a global leader serving customers across the spectrum of electronics applications and a world leader in power semiconductors.

Upgrades to ST’s production process allow its latest RF power MOSFETs to withstand peak voltages up to 200V, which is at least 20% more than competing devices. This increased ruggedness helps extend the operating lifetime of the power transistor, thereby reducing equipment downtime and ownership costs. The advanced process also improves the MOSFET’s gain, efficiency and high-power characteristics, which can help improve equipment performance and simplify design.